Research data supporting "Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy"

The dataset includes data for the associated article, encompassing the atomic force microscopy (AFM, in PeakForce Tapping mode), conventional and hyperspectral scanning capacitance microscopy (SCM), and scanning capacitance spectroscopy (SCS) data related to the GaN-based high electron mobility transistor (HEMT) structures. All the data were acquired using a Bruker Dimension Icon Pro AFM. The AFM was coupled with a Bruker SCM module when collecting the SCM and SCS data. All the data are saved as '.spm' files viewable with Bruker's NanoScope Analysis software. The hyperspectral SCM data can be further analysed using the freeware Hyperspy.

本数据集配套相关学术文章，涵盖氮化镓（GaN）基高电子迁移率晶体管（High Electron Mobility Transistor, HEMT）结构相关的原子力显微镜（Atomic Force Microscopy, AFM，峰力敲击模式）数据、常规与高光谱扫描电容显微镜（Scanning Capacitance Microscopy, SCM）数据，以及扫描电容光谱（Scanning Capacitance Spectroscopy, SCS）数据。所有数据均通过布鲁克（Bruker）Dimension Icon Pro型原子力显微镜采集。采集SCM与SCS数据时，该AFM联用了布鲁克SCM模块。所有数据均保存为.spm格式文件，可通过布鲁克NanoScope Analysis软件查看。高光谱SCM数据还可借助免费软件Hyperspy开展后续分析。