Dataset for GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

Dataset for GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell to be published (link pending).

All measurements, unless stated otherwise, were taken at Instituto de energía solar, Universidad Politécnica de Madrid (IES-UPM). Detailed description of the data can be found in the headers of individual files.

Fig2a_illuminated_IV.xlsx: Current-voltage characteristics of the prototype when illuminated with simulated AM1.5G.

Fig2d_e_S4_S5_EQE.xlsx: External quantum efficiencies of prototype and test device, measured before and after deposition of anti-reflection coating.

Fig3_IIVV.txt: Current-voltage characteristic of prototype when both junctions are measured simultaneously (AM1.5G).

Fig4e_IV.xlsx: Current-Voltage characteristics of devices with or without compensated base contact under illumination, measured in a probe station and after wirebonding.

Fig5a_illuminated_IV.xlsx: Current-voltage characteristics of the test device when illuminated at AM1.5G.

FigS1b_SIMS.xlsx: Doping profiles measured with secondary ion mass spectroscopy by Loughborough Surface Analysis Limited (LSA Ltd).

FigS6_EQE_using_solar_simulator_LEDs.xlsx: External quantum efficiencies of the prototype, measured using single channels of the LED- solar simulator. Both junctions of the prototype were measured with the other junction in open and short circuit.

FigS7_dark_IV.xlsx: Current-voltage characteristics of the prototype in the dark.

FigS8_SIMS.xlsx: Doping profiles of a sample containing the compensated contact measured with secondary ion mass spectroscopy by Loughborough Surface Analysis Limited (LSA Ltd).

FigS9_IIVV.txt: Current-voltage characteristic of the test device when both junctions are measured simultaneously (AM1.5G).

Junction areas of prototype [mm²]:

Illuminated:

Top junction: 1.02 \(\pm\)0.06

Bottom junction: 1.57 \(\pm\)0.11

Dark:

Top junction: 1.16 \(\pm\)0.05

Bottom junction: 1.93 \(\pm\)0.10

Junction areas of test device [mm²]:

Illuminated:

Top junction: 2.84 \(\pm\)0.12

Bottom junction: 3.32 \(\pm\)0.12

Dark:

Top junction: 3.28 \(\pm\)0.10

Bottom junction: 4.01 \(\pm\)0.09

本数据集对应待发表的GaInP/GaAs三端异质结双极晶体管太阳能电池研究（链接待补充）。

除非另有说明，所有测试均在马德里理工大学太阳能研究所（IES-UPM）完成。数据的详细说明可参见各数据文件的表头信息。

各数据文件说明如下：
1. Fig2a_illuminated_IV.xlsx：原型器件在模拟AM1.5G光谱光照下的电流-电压特性。
2. Fig2d_e_S4_S5_EQE.xlsx：原型器件与测试器件在沉积抗反射涂层（anti-reflection coating）前后的外量子效率（External Quantum Efficiency, EQE）。
3. Fig3_IIVV.txt：原型器件两个结同时测试时的电流-电压特性（AM1.5G光谱光照下）。
4. Fig4e_IV.xlsx：有无补偿基极接触的器件在光照下的电流-电压特性，测试分别在探针台（probe station）与引线键合（wirebonding）后完成。
5. Fig5a_illuminated_IV.xlsx：测试器件在AM1.5G光谱光照下的电流-电压特性。
6. FigS1b_SIMS.xlsx：由拉夫堡表面分析有限公司（Loughborough Surface Analysis Limited, LSA Ltd）通过二次离子质谱（Secondary Ion Mass Spectroscopy, SIMS）测得的掺杂分布。
7. FigS6_EQE_using_solar_simulator_LEDs.xlsx：原型器件的外量子效率，测试采用LED太阳能模拟器（LED-solar simulator）的单通道光源；测试过程中，原型器件的另一个结分别处于开路（open circuit）与短路（short circuit）状态。
8. FigS7_dark_IV.xlsx：原型器件在暗态下的电流-电压特性。
9. FigS8_SIMS.xlsx：由拉夫堡表面分析有限公司（LSA Ltd）通过二次离子质谱测得的含补偿接触样品的掺杂分布。
10. FigS9_IIVV.txt：测试器件两个结同时测试时的电流-电压特性（AM1.5G光谱光照下）。

原型器件结面积 [mm²]：
光照状态：
上结：1.02 ±0.06
下结：1.57 ±0.11
暗态：
上结：1.16 ±0.05
下结：1.93 ±0.10

测试器件结面积 [mm²]：
光照状态：
上结：2.84 ±0.12
下结：3.32 ±0.12
暗态：
上结：3.28 ±0.10
下结：4.01 ±0.09