Probing Purcell enhancement and photon collection efficiency of InAs quantum dots at nodes of the cavity electric field: data

Data from a study of how key metrics such as Purcell factor, β-factor and collection efficiency are determined by the non-cavity modes which exist in real devices, taking the well-studied micropillar cavity as an example. The pillars studied consist of 17(26) upper (lower) GaAs/AlGaAs DBRs containing InAs quantum dots. 1b - Cavity E-Field Sketch.csv Sinusoidal data used in a sketch of the electric field intensity within a cavity spacer layer of a micropillar. Column 1 is the vertical distance from the cavity centre in nm. Column 2 is the |E|2 is recorded in arbitrary units. 1c - Anti-Node Parallel.csv 2D mode field profile parallel to anti-node-placed dipole in a pillar. First column gives x-coordinates in um. First row gives z-coordinates in um. Data values are in V/m. 1d - Anti-Node Perpendicular.csv 2D mode field profile perpendicular to anti-node-placed dipole in a pillar. First column gives y-coordinates in um. First row gives z-coordinates in um. Data values are in V/m. 1e - Node Parallel.csv 2D mode field profile parallel to node-placed dipole in a pillar. First column gives x-coordinates in um. First row gives z-coordinates in um. Data values are in V/m. 1f - Node Perpendicular.csv 2D mode field profile parallel to node-placed dipole in a pillar. First column gives y-coordinates in um. First row gives z-coordinates in um. Data values are in V/m. 2a,b.csv Extracted values of the spontaneous emission coupling efficiency (col. 2), outcoupling efficiency (col. 3), Purcell factor (col. 4), and non-cavity modes normalised to the source power in a homogenous medium (col. 5), vary with the z position of the dipole source in a pillar (col. 1, in um). 3a - Anti-Node Power Dependent PL.csv 10 sec PL spectra at various powers obtained at 4K for a pillar with a quantum dot layer at the cavity anti-node without transitions resonant with the HE11 mode. First column gives the photon energy relative to the HE11 mode in eV. Columns 2-5 give PL count rates in kcounts/sec, at 3.2uW power, 9.6uW, 27.0uW, and 50.0uW. 3b - Node Power Dependent PL.csv 10 sec PL spectra at various powers obtained at 4K for a pillar with a quantum dot layer at the cavity node without transitions resonant with the HE11 mode. First column gives the photon energy relative to the HE11 mode in eV. Columns 2-5 give PL count rates in kcounts/sec, at 3.0uW power, 10.3uW, 26.0uW, and 49.7uW. 3c - Anti-Node Statistical PL.csv Collated 10 sec PL spectra obtained at 4K for 24 pillars with a quantum dot layer at the cavity anti-node. Cols. 1 and 2 give the photon energy relative to the HE11 mode in eV and the combined counts in kCounts/sec. Cols. 3 and 4 give another set of photon energy in eV and the spectra in kCounts/sec after averaging in 0.01nm bins, x2.5. 3d - Node Statistical PL.csv Collated 10 sec PL spectra obtained at 4K for 24 pillars with a quantum dot layer at the cavity node. Cols. 1 and 2 give the photon energy relative to the HE11 mode in eV and the combined counts in kCounts/sec. Cols. 3 and 4 give another set of photon energy in eV and the spectra in kCounts/sec after averaging in 0.01nm bins, x2.5. 4 - Transition A1.csv Col. 1 gives photon energy relative to the HE11 mode in meV of a magnetically detuned transition near the cavity mode of a sample with a quantum dot layer at the cavity anti-node. Col. 2 gives the resulting radiative lifetime recorded in ps. Col. 3 gives the corresponding magnetic field used in T, while col. 4 is the change in energy due to the Zeeman tuning in meV. Some values are unrecorded due to overlapping transitions or stage issues at high B-field. 4 - Transition A2.csv Col. 1 gives photon energy relative to the HE11 mode in meV of a magnetically detuned transition near the cavity mode of a sample with a quantum dot layer at the cavity anti-node. Col. 2 gives the resulting radiative lifetime recorded in ps. Col. 3 gives the corresponding magnetic field used in T, while col. 4 is the change in energy due to the Zeeman tuning in meV. Some values are unrecorded due to overlapping transitions or stage issues at high B-field. 4 - Transition A3.csv Col. 1 gives photon energy relative to the HE11 mode in meV of a magnetically detuned transition near the cavity mode of a sample with a quantum dot layer at the cavity anti-node. Col. 2 gives the resulting radiative lifetime recorded in ps. Col. 3 gives the corresponding magnetic field used in T, while col. 4 is the change in energy due to the Zeeman tuning in meV. Some values are unrecorded due to overlapping transitions or stage issues at high B-field. 4 - Transition B1.csv Col. 1 gives photon energy relative to the HE11 mode in meV of a magnetically detuned transition near the cavity mode of a sample with a quantum dot layer at the cavity node. Col. 2 gives the resulting radiative lifetime recorded in ps. Col. 3 gives the corresponding magnetic field used in T, while col. 4 is the change in energy due to the Zeeman tuning in meV. Some values are unrecorded due to overlapping transitions or stage issues at high B-field. 4 - Transition B2.csv Col. 1 gives photon energy relative to the HE11 mode in meV of a magnetically detuned transition near the cavity mode of a sample with a quantum dot layer at the cavity node. Col. 2 gives the resulting radiative lifetime recorded in ps. Col. 3 gives the corresponding magnetic field used in T, while col. 4 is the change in energy due to the Zeeman tuning in meV. Some values are unrecorded due to overlapping transitions or stage issues at high B-field. 4 - Transition B3a.csv Col. 1 gives photon energy relative to the HE11 mode in meV of a magnetically detuned transition near the cavity mode of a sample with a quantum dot layer at the cavity node. Col. 2 gives the resulting radiative lifetime recorded in ps. Col. 3 gives the corresponding magnetic field used in T, while col. 4 is the change in energy due to the Zeeman tuning in meV. Some values are unrecorded due to overlapping transitions or stage issues at high B-field. 4 - Transition B3b.csv Col. 1 gives photon energy relative to the HE11 mode in meV of a magnetically detuned transition near the cavity mode of a sample with a quantum dot layer at the cavity node. Col. 2 gives the resulting radiative lifetime recorded in ps. Col. 3 gives the corresponding magnetic field used in T, while col. 4 is the change in energy due to the Zeeman tuning in meV. Some values are unrecorded due to overlapping transitions or stage issues at high B-field.

本数据集源于一项关于实际器件中非腔模式如何决定珀塞尔因子（Purcell factor）、β因子以及收集效率等关键指标的研究，以被广泛研究的微柱腔（micropillar cavity）为示例对象。所研究的微柱由17(26)层上(下)部GaAs/AlGaAs分布布拉格反射镜（Distributed Bragg Reflector，DBR）构成，其中嵌入了InAs量子点。
1b - Cavity E-Field Sketch.csv：用于绘制微柱腔间隔层内电场强度分布示意图的正弦数据。第1列为距腔中心的垂直距离，单位为纳米（nm）；第2列为以任意单位记录的|E|²值。
1c - Anti-Node Parallel.csv：微柱内与驻波腹点放置的偶极子平行的二维模式场轮廓数据。第1列为x坐标，单位为微米（μm）；第1行为z坐标，单位为微米（μm）；数据值单位为伏特每米（V/m）。
1d - Anti-Node Perpendicular.csv：微柱内与驻波腹点放置的偶极子垂直的二维模式场轮廓数据。第1列为y坐标，单位为微米（μm）；第1行为z坐标，单位为微米（μm）；数据值单位为伏特每米（V/m）。
1e - Node Parallel.csv：微柱内与驻波节点放置的偶极子平行的二维模式场轮廓数据。第1列为x坐标，单位为微米（μm）；第1行为z坐标，单位为微米（μm）；数据值单位为伏特每米（V/m）。
1f - Node Perpendicular.csv：微柱内与驻波节点放置的偶极子垂直的二维模式场轮廓数据。第1列为y坐标，单位为微米（μm）；第1行为z坐标，单位为微米（μm）；数据值单位为伏特每米（V/m）。
2a,b.csv：自发辐射耦合效率（第2列）、出耦合效率（第3列）、珀塞尔因子（第4列）以及归一化至均匀介质中源功率的非腔模式强度（第5列）随微柱内偶极子源的z轴位置（第1列，单位为μm）变化的提取值。
3a - Anti-Node Power Dependent PL.csv：在4K温度下，针对腔腹点处嵌入量子点层且无与HE11模式共振跃迁的微柱，采集的不同功率下的10秒光致发光（Photoluminescence，PL）光谱。第1列为相对于HE11模式的光子能量，单位为电子伏特（eV）；第2至5列分别为3.2μW、9.6μW、27.0μW和50.0μW功率下的PL计数率，单位为千计数每秒（kcounts/sec）。
3b - Node Power Dependent PL.csv：在4K温度下，针对腔节点处嵌入量子点层且无与HE11模式共振跃迁的微柱，采集的不同功率下的10秒光致发光光谱。第1列为相对于HE11模式的光子能量，单位为电子伏特（eV）；第2至5列分别为3.0μW、10.3μW、26.0μW和49.7μW功率下的PL计数率，单位为千计数每秒（kcounts/sec）。
3c - Anti-Node Statistical PL.csv：整理自24个腔腹点处嵌入量子点层的微柱的10秒光致发光光谱，采集温度为4K。第1、2列为相对于HE11模式的光子能量（eV）与总计数率（kCounts/sec）；第3、4列为另一组以0.01nm为间隔平均后、放大2.5倍的光子能量（eV）与光谱计数率。
3d - Node Statistical PL.csv：整理自24个腔节点处嵌入量子点层的微柱的10秒光致发光光谱，采集温度为4K。第1、2列为相对于HE11模式的光子能量（eV）与总计数率（kCounts/sec）；第3、4列为另一组以0.01nm为间隔平均后、放大2.5倍的光子能量（eV）与光谱计数率。
4 - Transition A1.csv：第1列为腔腹点处嵌入量子点层的样品腔模式附近磁调谐跃迁的光子能量（相对于HE11模式，单位为毫电子伏特（meV））；第2列为测得的辐射寿命，单位为皮秒（ps）；第3列为对应的磁场强度，单位为特斯拉（T）；第4列为塞曼调谐导致的能量变化量，单位为meV。由于高磁场下的跃迁重叠或载物台故障，部分数据未被记录。
4 - Transition A2.csv：第1列为腔腹点处嵌入量子点层的样品腔模式附近磁调谐跃迁的光子能量（相对于HE11模式，单位为meV）；第2列为测得的辐射寿命，单位为ps；第3列为对应的磁场强度，单位为T；第4列为塞曼调谐导致的能量变化量，单位为meV。由于高磁场下的跃迁重叠或载物台故障，部分数据未被记录。
4 - Transition A3.csv：第1列为腔腹点处嵌入量子点层的样品腔模式附近磁调谐跃迁的光子能量（相对于HE11模式，单位为meV）；第2列为测得的辐射寿命，单位为ps；第3列为对应的磁场强度，单位为T；第4列为塞曼调谐导致的能量变化量，单位为meV。由于高磁场下的跃迁重叠或载物台故障，部分数据未被记录。
4 - Transition B1.csv：第1列为腔节点处嵌入量子点层的样品腔模式附近磁调谐跃迁的光子能量（相对于HE11模式，单位为meV）；第2列为测得的辐射寿命，单位为ps；第3列为对应的磁场强度，单位为T；第4列为塞曼调谐导致的能量变化量，单位为meV。由于高磁场下的跃迁重叠或载物台故障，部分数据未被记录。
4 - Transition B2.csv：第1列为腔节点处嵌入量子点层的样品腔模式附近磁调谐跃迁的光子能量（相对于HE11模式，单位为meV）；第2列为测得的辐射寿命，单位为ps；第3列为对应的磁场强度，单位为T；第4列为塞曼调谐导致的能量变化量，单位为meV。由于高磁场下的跃迁重叠或载物台故障，部分数据未被记录。
4 - Transition B3a.csv：第1列为腔节点处嵌入量子点层的样品腔模式附近磁调谐跃迁的光子能量（相对于HE11模式，单位为meV）；第2列为测得的辐射寿命，单位为ps；第3列为对应的磁场强度，单位为T；第4列为塞曼调谐导致的能量变化量，单位为meV。由于高磁场下的跃迁重叠或载物台故障，部分数据未被记录。
4 - Transition B3b.csv：第1列为腔节点处嵌入量子点层的样品腔模式附近磁调谐跃迁的光子能量（相对于HE11模式，单位为meV）；第2列为测得的辐射寿命，单位为ps；第3列为对应的磁场强度，单位为T；第4列为塞曼调谐导致的能量变化量，单位为meV。由于高磁场下的跃迁重叠或载物台故障，部分数据未被记录。