Dataset associated with "Effect of annealing on the interfacial Dzyaloshinskii-Moriya interaction in Ta/CoFeB/MgO trilayers"

The interfacial Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilize homochiral Nèel-type domain walls in thin films with perpendicular magnetic anisotropy and as a result permit them to be propagated by a spin Hall torque. In this study, we demonstrate that in Ta/Co20Fe60B20/MgO the DMI may be influenced by annealing. We find that the DMI peaks at D=0.057 +/- 0.003 mJ/m2 at an annealing temperature of 230 DegC. DMI fields were measured using a purely field-driven creep regime domain expansion technique. The DMI field and the anisotropy field follow a similar trend as a function of annealing temperature. We infer that the behavior of the DMI and the anisotropy are related to interfacial crystal ordering and B expulsion out of the CoFeB layer as the annealing temperature is increased.

界面Dzyaloshinskii-Moriya相互作用（DMI）已被证实可在具备垂直磁各向异性的薄膜中稳定同手性奈尔型畴壁，进而使得这类畴壁可通过自旋霍尔力矩实现传播。本研究证实，在Ta/Co₂₀Fe₆₀B₂₀/MgO多层膜体系中，DMI强度会受退火工艺影响。研究发现，当退火温度为230℃时，DMI强度达到峰值0.057±0.003 mJ/m²。研究人员采用纯场驱动蠕变畴扩张技术对DMI场进行了测量，结果显示，DMI场与各向异性场随退火温度的变化趋势相似。据此我们推断，DMI与各向异性场的变化行为与退火温度升高过程中的界面晶体有序化，以及硼（B）从CoFeB层中析出的现象密切相关。