Data-set supporting the article entitled "The impact of BTI aging on the reliability of level shifters in nano-scale CMOS technology"
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This data-set supports the article entitled "The impact of BTI aging on the reliability of level shifters in nano-scale CMOS technology", accepted for the publication in Microelectronics Reliability DOI:10.1016/j.microrel.2016.10.018
本数据集支撑题为《纳米级互补金属氧化物半导体(Complementary Metal-Oxide Semiconductor,CMOS)工艺中偏置温度不稳定性(Bias Temperature Instability,BTI)老化对电平转换器可靠性的影响》的论文,该论文已被《微电子可靠性》(Microelectronics Reliability)期刊录用待刊,其数字对象标识符(Digital Object Identifier,DOI)为10.1016/j.microrel.2016.10.018
创建时间:
2016-12-02



