A Novel Alkylated Indacenodithieno[3,2-b]thiophene-based Polymer for Highperformance

A novel rigid donor monomer, indacenodithieno[3,2-b]thiophene (IDTT), containing linearalkyl chains is reported. Co-polymers of IDTT with the acceptor benzothiadiazole (BT) isshown to be excellent p-type semiconductors in organic field effect transistors (OFET).Devices based upon conventional top gate architectures with pentafluorobenzenethiolmodified Au electrodes exhibited a hole mobility up to 6.6 cm2V-1s-1 after thermal annealing.We also demonstrate for the first time that treatment of the electrodes with solution depositedcopper(I) thiocyanate (CuSCN) interfacial layer has a beneficial hole injection/electronblocking effect, further enhancing mobility to 8.7 cm2V-1s-1.本文报道了一种带有直链烷基的新型刚性给体单体——茚并二噻吩并[3,2-b]噻吩（indacenodithieno[3,2-b]thiophene，IDTT）。研究表明，IDTT与受体苯并噻二唑（benzothiadiazole，BT）共聚得到的聚合物，在有机场效应晶体管（organic field effect transistors，OFET）中表现为优异的p型半导体材料。采用传统顶栅结构、并经五氟苯硫醇修饰金电极制备的器件，经热退火处理后空穴迁移率可达6.6 cm²V⁻¹s⁻¹。本研究还首次证实，通过溶液沉积硫氰酸亚铜（copper(I) thiocyanate，CuSCN）界面层对电极进行修饰，可实现有益的空穴注入/电子阻挡效应，进一步将迁移率提升至8.7 cm²V⁻¹s⁻¹。