Oxidation of silver nanostructures

Silver nanostructures were prepared on Si substrate. Thin Ag films (2 and 6 nm thickness) were deposited using a tabletop dc magnetron sputtering coater (EM SCD 500, Leica) in pure Ar plasma. The Ag target was of 99.99% purity, the rate of layer deposition was about 0.4 nm·s−1 , and the incident power was in the range of 30–40 W. The layer thickness was measured in situ using a quartz crystal microbalance. To form nanostructures, the as-prepared films were put into a hot furnace and annealed in argon atmosphere at different temperatures for different periods of time. Oxidaton of silver nanostructures was measured by XPS method. Additionally a bulk silver was measured. In this dataset XPS O1s specra are presented.

本研究在硅（Si）衬底上制备银纳米结构。使用台式直流磁控溅射镀膜机（EM SCD 500，徕卡 Leica）在纯氩（Ar）等离子体环境中，沉积厚度分别为2 nm与6 nm的银（Ag）薄膜。所用银靶材纯度达99.99%，薄膜沉积速率约为0.4 nm·s⁻¹，入射功率范围为30~40 W。薄膜厚度通过石英晶体微天平（quartz crystal microbalance）进行原位监测。为获得银纳米结构，将初始制备的薄膜置于高温管式炉中，在氩气气氛下于不同温度、保温不同时长进行退火处理。采用X射线光电子能谱（XPS）法表征银纳米结构的氧化情况，同时以块体银作为对照样品。本数据集包含XPS O1s谱图数据。