PSST2016- Data used in paper on photoresist removal using an APPJ

Data for the publication "Fast, Downstream Removal of Photoresist Using Reactive Oxygen Species From The Effluent of An Atmospheric Pressure Plasma Jet".
The data consists of measurements of etch rates for different settings of the plasma jet, i.e. varying frequency, power and flow rate. Details on how the measurements are performed can be found in the paper. Furthermore, there is FTIR surface analysis data for Photoresist, Si wafer, ICP etched PR wafer, and APPJ etched PR wafer in arb units with respect to the wavenumber. Finally, Two-photon Absorption Laser Induced Fluorescence data at 3 mm from the plasma exit is obtained. The lifetime and total signal are recorded. The relative density is taken as signal/lifetime, then normalised to the maximum. This value is then multiplied by the flow rate in standard litres per minute to give a relative flux, and normalised.

本数据集配套于论文《利用常压等离子体射流流出物中的活性氧物种快速下游去除光刻胶》（"Fast, Downstream Removal of Photoresist Using Reactive Oxygen Species From The Effluent of An Atmospheric Pressure Plasma Jet"）。数据集包含等离子体射流不同参数配置下的刻蚀速率测量数据，参数涵盖可变频率、输出功率与气体流量，实验测量的详细细节可查阅该论文。此外，数据集包含光刻胶、硅片、感应耦合等离子体（Inductively Coupled Plasma，ICP）刻蚀光刻胶晶圆以及常压等离子体射流（Atmospheric Pressure Plasma Jet，APPJ）刻蚀光刻胶晶圆的傅里叶变换红外光谱（Fourier Transform Infrared Spectroscopy，FTIR）表面分析数据，数据以波数为横轴，单位为任意单位。最后，数据集包含距等离子体出口3 mm处的双光子吸收激光诱导荧光（Two-photon Absorption Laser Induced Fluorescence，TALIF）数据，该数据记录了荧光寿命与总信号强度。相对密度以信号强度与寿命的比值计算，随后以最大值为基准进行归一化处理；将该归一化后的相对密度乘以以标准升每分钟为单位的气体流量，得到相对通量，随后再次进行归一化处理。