Data underlying the figures in publication: A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature

Data used in the figures of paper: "A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature". Measurements of a 36x36 gate electrode crossbar, fabricated on an industrial 28Si-MOS stack, that supports 648 narrow-channel field effect transistors for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines.

本数据集为论文《低温下互连呈亚线性缩放的量子点交叉阵列》（*A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature*）配图所用的实验数据，包含基于工业级28硅-金属氧化物半导体（28Si-MOS）堆叠制程制备的36×36栅电极交叉阵列的测试结果；该交叉阵列可支持648个用于栅极定义量子点的窄沟道场效应晶体管，且量子点总数随控制线的线性增长呈二次方增长。