8英寸压力传感器成套工艺关键步骤工艺参数数据集

随着科技的进步和应用领域的扩展，MEMS压力传感器的市场需求不断增加，并发挥着越来越重要的作用。本数据集含有8英寸压力传感器成套工艺的顶硅层厚度、氧化硅应力、多晶硅应力和刻蚀深度核心结构参数，时间范围为2021年–2024年，是在英格尔检测技术服务（上海）有限公司现场监督下，依据测试大纲在上海新微技术研发中心有限公司八寸线洁净室测试所得。采用专业仪器与软件对数据进行测试和处理，最终获得了项目指标要求范围内顶硅层厚度平均值、最大值、最小值、均一度和厚度分布图；氧化硅应力平均值，多晶硅应力平均值以及背腔刻蚀深度SEM图。本数据集为8英寸压力传感器成套工艺关键步骤工艺核心结构参数，为压力传感器成套工艺关键步骤优化、性能表征等方面有着重要的指导意义。

With the advancement of technology and expansion of application domains, the market demand for MEMS pressure sensors has been growing steadily, playing an increasingly critical role. This dataset includes core structural parameters such as top silicon layer thickness, silicon oxide stress, polycrystalline silicon stress and etching depth for the complete manufacturing process of 8-inch pressure sensors, covering the period from 2021 to 2024. The data was acquired in the cleanroom of the 8-inch wafer production line of Shanghai Xinwei Technology R&D Center Co., Ltd., under the on-site supervision of Ingel Testing Technology Service (Shanghai) Co., Ltd., in accordance with the pre-defined test protocol. Professional instruments and supporting software were utilized to test and process the data, finally yielding the average, maximum, minimum values, uniformity and thickness distribution map of the top silicon layer thickness within the project's specified index limits; the average stress of silicon oxide, the average stress of polycrystalline silicon, as well as SEM images of the back cavity etching depth. This dataset provides core structural parameters for the key stages of the complete manufacturing process of 8-inch pressure sensors, and carries significant guiding significance for the optimization of key process steps, performance characterization and other relevant aspects of pressure sensor manufacturing processes.