Source Data for 'Robust single modified divacancy color centers in 4H-SiC under resonant excitation'

Color centers in silicon carbide (SiC) offer exciting possibilities for quantum information processing. However, the challenge of ionization during optical manipulation leads to charge variations, hampering the efficacy of spin-photon interfaces. Recent research predicted that modified divacancy color centers can stabilize their charge states, resisting photoionization. This study presents a method for precisely creating single divacancy arrays in 4H-SiC using a focused helium ion beam. Photoluminescence tests reveal consistent emission with minimal linewidth fluctuations (∼50 MHz over 3 hours). By measuring the ionization rate for different polytypes of divacancies, we found that the modified divacancies are more robust against resonant excitation. Furthermore, angle-resolved photoluminescence excitation spectra unveil two resonant-transition lines with orthogonal polarizations. Enhanced optical and spin characteristics were notably observed in these divacancies compared to those generated through carbon-ion and shallow implantation methods, positioning modified divacancies as promising contenders for advancing on-chip quantum technologies.

碳化硅（silicon carbide, SiC）中的色心为量子信息处理提供了极具潜力的应用方向。然而，光学操控过程中存在的电离难题会引发电荷态波动，进而制约自旋-光子界面的应用效能。近期研究预测，经过修饰的双空位色心能够稳定自身电荷态，抵御光致电离效应。本研究提出了一种利用聚焦氦离子束在4H型碳化硅（4H-SiC）中精准制备单双空位阵列的方法。光致发光（photoluminescence, PL）测试结果显示，其发射信号稳定性优异，线宽波动极小——3小时内仅约50 MHz。通过测量不同多型双空位的电离速率，我们发现修饰型双空位对共振激发具有更强的抗干扰能力。此外，角分辨光致发光激发（angle-resolved photoluminescence excitation）光谱揭示了两条具备正交偏振特性的共振跃迁谱线。相较于通过碳离子注入与浅注入工艺制备的双空位，此类修饰型双空位展现出更优异的光学与自旋特性，使其成为推动片上量子技术发展的极具潜力的候选方案。