Data for the article entitled: "Complex Research on Amorphous Vanadium Oxide thin Films Deposited by Gas Impulse Magnetron Sputtering"

Files include the data presented in the manuscript entitled: "Complex Research on Amorphous Vanadium Oxide thin Films Deposited by Gas Impulse Magnetron Sputtering", by Mazur et al., https://doi.org/10.3390/app12188966 Fig. 1 presents dependence of the deposition rate of vanadium oxides thin films on the Ar:O2 gas ratio during magnetron sputtering.Fig. 2 presents diffraction patterns of vanadium oxides deposited with various Ar:O2 gas ratios.Fig. 3h presents an EDS spectrum of a thin film deposited with Ar:O2 ratio of 4:1.Fig. 4a presents transmission spectra of VxOy thin films deposited with various Ar:O2 gas ratios during the magnetron sputtering process.Fig. 6 presents the fundamental absorption edge of as‐deposited vanadium oxide thin films.Fig. 7 presents Current‐voltage characteristics of selected VxOy thin films prepared with Ar:O2 gas ratios of: 3:1, 7:1 and 8:1.Fig. 8 presents resistivity as a function of 1000/T of vanadium oxide thin films deposited with various Ar:O2 gas ratios during sputtering process.Fig. 11 presents thermoelectric characteristics of vanadium oxides thin films deposited with various Ar:O2 gas ratios.Fig. 12 presents gas response upon exposure to the 3.5% of hydrogen of as‐deposited VxOy thin films prepared using various Ar:O2 gas ratios during sputtering: 8:1, 7:1, 6:1, 5:1.Fig. 13a presents results of the hardness measurement for selected thin films.

本数据集包含Mazur等人发表于题为《气体脉冲磁控溅射沉积非晶氧化钒薄膜的复杂研究》的手稿中的相关数据，对应DOI：10.3390/app12188966。图1展示了磁控溅射过程中氧化钒薄膜的沉积速率随Ar:O₂气体比例的变化关系。图2展示了不同Ar:O₂气体比例下沉积的氧化钒薄膜的衍射图谱。图3h展示了Ar:O₂比例为4:1时沉积的薄膜的能量色散X射线能谱（Energy Dispersive X-ray Spectroscopy, EDS）。图4a展示了磁控溅射过程中，不同Ar:O₂气体比例下沉积的VₓOᵧ薄膜的透射光谱。图6展示了沉积态氧化钒薄膜的本征吸收边。图7展示了采用Ar:O₂比例分别为3:1、7:1和8:1制备的典型VₓOᵧ薄膜的电流-电压特性曲线。图8展示了溅射过程中不同Ar:O₂气体比例下沉积的氧化钒薄膜的电阻率随1000/T的变化关系。图11展示了不同Ar:O₂气体比例下沉积的氧化钒薄膜的热电特性。图12展示了采用溅射过程中不同Ar:O₂气体比例（8:1、7:1、6:1、5:1）制备的沉积态VₓOᵧ薄膜在暴露于3.5%氢气时的气敏响应特性。图13a展示了典型薄膜的硬度测试结果。