Source data related to manuscript entitled "Magneto-Ionic Vortices: Voltage-Reconfigurable Swirling-Spin Analog-Memory Nanomagnets" (NCOMMS-24-28379-A)

Source data includes Excel files with the following names: Fig. 1 Data: (i) Experimental hysteresis loops of FeCoN nanodots measured in-situ during voltage gating by magneto-optical Kerr effect; (ii) Energy-dispersive X-ray compositional analysis of as-grown FeCoN dots. Fig. 2 Data: Evolution of magnetic parameters (from experimental hysteresis loops): Kerr amplitude measured at saturation (Happlied = 2000 Oe), squareness ratio, saturation/annihilation field, nucleation field and coercivity. Fig. 3 Data: MOKE hysteresis loops for selected voltage-actuation times (short-term and long-term actuation under -25 V). Fig. 4 Data: Normalized EELS compositional line profiles of as-grown and treated FeCoN dots. Fig. 5 Data: Simulated hysteresis loops for selected thicknesses of generated magnetic phase (2, 8 and 12 nm), upon application of -25 V. Fig. S2 Data: In-situ measured MOKE hysteresis loops during voltage-actuation of FeCoN nanodots (-25 V, +25 V). Fig. S3 Data: Hysteresis loops measured by MOKE for as grown and – 25 V treated FeCoN film. Fig. S4 Data: Cyclability measurements (Kerr amplitude and voltage vs. time) upon successive gating with opposite voltage polarities (+10 V / -10 V). Fig. S6 Data: MOKE hysteresis loop obtained for the single 2 μm FeCo(N) dot after long-term negative voltage treatment. Fig. S9 Data: Simulated single-run hysteresis loops obtained for 280-nm diameter disks with Ms = 550 emu/cm^3 for L of 12 to 2 nm with (a) no anisotropy and no grains, (b) 5-nm grains with K = 4 × 10^5 erg/cm^3, and (c) 5-nm grains with decreasing K values (6.0, 5.2, 4.5, 4.0, 3.4, 3.0) × 10^5 erg/cm^3. Fig. S10 Data: Hysteresis loops for 280-nm diameter disks showing the single-run hysteresis loops (10 runs) as well as the average over the 10 runs. The parameters were selected to reproduce experimental results for a (a) short negative voltage treatment (L = 2 nm, Ms = 400 emu/cm^3, K = 2.5 × 10^5 erg/cm^3) (b) a mid-length negative voltage treatment (L = 8 nm, Ms = 500 emu/cm^3, Ku = 3.5 × 10^5 erg/cm^3) (c) the longest negative voltage treatment (L = 12 nm, Ms = 550 emu/cm^3, K = 6 × 10^5 erg/cm^3). Similar parameters to those used for L = 12 nm were then used to simulate the hysteresis loop expected for (d) a subsequent positive voltage treatment (L = 2 nm, Ms = 500 emu/cm^3, K = 6 × 10^5 erg/cm^3). Fig. S11 Data: Simulated single-run hysteresis loops (10 runs), as well as averaged hysteresis loop shown for 280-nm diameter magnetic disk with a thickness of 2 nm, Ms = 550 emu/cm^3, K = 6 × 10^5 erg/cm^3 and inter-grain exchange coupling of 30% of the underlying exchange value inside the grains (corresponding to long-term application of + 25 V). Fig. S12 Data: Simulated hysteresis loops for 280 nm diameter magnetic disks after long-term voltage treatment showing the effect of dipolar interactions. Parameters used are as previously established, i.e., thickness 12 nm, MS = 550 emu/cm3 , Ku = 6×105 erg/cm3. The curve“1 disk” represents a single disk using the original parameters as described in the text. The “PBC 4” curve shows hysteresis loops that include dipolar interactions, accounted for by applying periodic boundary conditions. The “PBC 1” curve serves as a control for PBC4, illustrating the loops for disks with PBC switched off (i.e., no interactions between the dots). Fig. S13 Data: Calculated normalized annihilation field HA/HA(isolated) for arrays of 280 nm nanodots with three thicknesses of generated magnetic phase L = 2, 6, 12 nm.

本数据集的源数据包含以下命名的Excel文件：
图1数据：(i) 磁光克尔效应（magneto-optical Kerr effect, MOKE）原位测试电压门控过程中FeCoN纳米点的实验磁滞回线；(ii) 原始生长态FeCoN纳米点的能量色散X射线成分分析结果。
图2数据：由实验磁滞回线提取的磁参数演化数据集，包括外加磁场为2000奥斯特(Oe)时饱和状态下测得的克尔振幅、矩形比、饱和/湮灭场、形核场与矫顽力。
图3数据：-25V电压驱动下，不同时长（短时与长时）FeCoN纳米点的MOKE磁滞回线。
图4数据：原始生长态与经处理FeCoN纳米点的归一化电子能量损失谱（Electron Energy-Loss Spectroscopy, EELS）成分线轮廓。
图5数据：施加-25V电压时，不同厚度（2、8、12nm）生成磁相的模拟磁滞回线。
补充图S2数据：FeCoN纳米点在-25V与+25V电压驱动过程中原位测得的MOKE磁滞回线。
补充图S3数据：原始生长态与经-25V处理的FeCoN薄膜的MOKE磁滞回线。
补充图S4数据：采用相反电压极性（+10V/-10V）连续门控时的循环稳定性测试数据，包含克尔振幅与电压随时间的变化曲线。
补充图S6数据：经长时负电压处理后的单个2μm FeCo(N)纳米点的MOKE磁滞回线。
补充图S9数据：针对直径280nm、饱和磁化强度Ms=550emu/cm³的圆盘，在厚度L从12nm降至2nm时的单次模拟磁滞回线，分为三组：(a) 无各向异性且无晶粒结构；(b) 晶粒尺寸5nm、各向异性能K=4×10^5 尔格/立方厘米；(c) 晶粒尺寸5nm、K值依次递减（6.0、5.2、4.5、4.0、3.4、3.0）×10^5 尔格/立方厘米。
补充图S10数据：直径280nm圆盘的磁滞回线数据集，包含10次单次模拟磁滞回线与10次结果的平均值，参数设置用于复现不同时长负电压处理的实验结果：(a) 短时长负电压处理（L=2nm，Ms=400emu/cm³，K=2.5×10^5 尔格/立方厘米）；(b) 中时长负电压处理（L=8nm，Ms=500emu/cm³，Ku=3.5×10^5 尔格/立方厘米）；(c) 最长时长负电压处理（L=12nm，Ms=550emu/cm³，K=6×10^5 尔格/立方厘米）；随后采用与L=12nm组相似的参数，模拟(d) 后续正电压处理的预期磁滞回线（L=2nm，Ms=500emu/cm³，K=6×10^5 尔格/立方厘米）。
补充图S11数据：针对厚度2nm、Ms=550emu/cm³、K=6×10^5 尔格/立方厘米的280nm直径磁盘，包含10次单次模拟磁滞回线与平均磁滞回线，其中晶粒间交换耦合强度为晶粒内部交换值的30%，对应+25V长时施加场景。
补充图S12数据：长时电压处理后280nm直径磁盘的模拟磁滞回线，展示偶极相互作用的影响。采用的参数与前文一致：厚度12nm，Ms=550emu/cm³，Ku=6×10^5 尔格/立方厘米。其中"1 disk"曲线为采用原文所述原始参数的单个磁盘结果；"PBC 4"曲线为采用周期性边界条件计入偶极相互作用的磁滞回线；"PBC 1"曲线作为PBC 4的对照组，展示关闭周期性边界条件（即纳米点间无相互作用）时的磁滞回线。
补充图S13数据：针对生成磁相厚度分别为2、6、12nm的280nm纳米点阵列，计算得到的归一化湮灭场HA/HA(isolated)。