Low Excess Noise of Al0.85Ga0.15As0.56Sb0.44 Avalanche Photodiode from Pure Electron Injection

The files correspond to experimental results in paper: <b>Low Excess Noise of Al0.85Ga0.15As0.56Sb0.44 Avalanche Photodiode from Pure Electron Injection</b><br>There are two types of files:- .png which correspond to the figures- .csv, which are raw data in figures and tables<br>This work presents gain and excess noise data for Al0.85Ga0.15As0.56Sb0.44 p-i-n with an i-region of 600 nm for pure electron and two mixed injection profiles. <br><br><br><br>J. Taylor-Mew, V. Shulyak, B. White, C. H. Tan and J. S. Ng, "Low Excess Noise of Al_0.85Ga_0.15As_0.56Sb_0.44 Avalanche Photodiode From Pure Electron Injection," in <em>IEEE Photonics Technology Letters</em>, vol. 33, no. 20, pp. 1155-1158, Oct.15, 15 2021, doi: 10.1109/LPT.2021.3110123.<br>

本数据集文件对应以下学术论文的实验结果：《基于纯电子注入的Al₀.₈₅Ga₀.₁₅As₀.₅₆Sb₀.₄₄雪崩光电二极管（Avalanche Photodiode）的低过剩噪声（excess noise）》。本数据集包含两类文件：其一为.png格式文件，对应论文中的各类插图；其二为.csv格式文件，包含插图与表格对应的原始实验数据。本数据集提供了i区厚度为600 nm的Al₀.₈₅Ga₀.₁₅As₀.₅₆Sb₀.₄₄ p-i-n型器件在纯电子注入以及两种混合注入模式下的增益与过剩噪声数据。J. Taylor-Mew、V. Shulyak、B. White、C. H. Tan与J. S. Ng，《基于纯电子注入的Al₀.₈₅Ga₀.₁₅As₀.₅₆Sb₀.₄₄雪崩光电二极管的低过剩噪声》，发表于《IEEE光子学技术快报（IEEE Photonics Technology Letters）》，2021年10月15日，第33卷第20期，第1155-1158页，DOI: 10.1109/LPT.2021.3110123。