Study of the deformation potential in InGaN nanostructures on porous GaN

Our aim in this project is to experimentally determine the deformation potential of the InxGa1-xN alloy (“InGaN”). Until now this task has been elusive due to the convoluted nature of luminescence from InGaN heterostructures. Our approach is to allow for elastic relaxation of InGaN by forming InGaN nanostructures on nanoporous GaN. Making use of wide InGaN quantum wells (QWs) on these compliant pseudo-substrates leads to the absence of quantum confined Stark effect (QCSE)1 compositional pulling effect2. We will use the ESRF light source to map the strain distribution in InGaN nanostructures and correlate it with the observed shifts of the luminescence. This way, we will determine the influence of the deformation potential.

本项目的研究目标为通过实验测定铟镓氮（InₓGa₁₋ₓN，InGaN）合金的形变势。此前由于铟镓氮异质结构的发光过程极为复杂，该任务一直难以完成。我们的研究方案为：在纳米多孔氮化镓衬底上制备铟镓氮纳米结构，以此实现铟镓氮的弹性弛豫。在这类柔性伪衬底上采用宽幅铟镓氮量子阱（QWs），可消除量子限制斯塔克效应（QCSE）¹与组分牵引效应²。我们将借助欧洲同步辐射光源（ESRF）测绘铟镓氮纳米结构的应变分布，并将其与观测到的发光位移建立关联，借此明确形变势的具体影响。