SHANNON__20240612__DATA_Results__VirginState_PCM_90nm_1T1R_selector

Characterization of nominal IV curves of the MOSFET selector in a 1T1R cell, considering dependencies on Vgs, Vds, and Temperature. Characterization was performed based on the MOSFET model using 90nm PDK by STMicroelectronics.针对1T1R单元（1T1R cell）内MOSFET选择器（Metal-Oxide-Semiconductor Field-Effect Transistor）的标称电流-电压（IV）特性曲线开展特性表征，系统考量栅源电压（Vgs）、漏源电压（Vds）与温度对其的依赖规律。本次特性表征基于意法半导体（STMicroelectronics）采用90nm工艺设计工具包（Process Design Kit，PDK）所搭建的MOSFET模型完成。