Room temperature lasing from InGaAs quantum well nanowires on silicon-on-insulator substrates

In this work we demonstrate room temperature lasing from core-shell nanowires consisting of a radial InGaAs quantum well as the active material.The nanowires with the GaAs/InGaAs/InGaP quantum well structures are arranged in a deformed honeycomb lattice, forming a photonic crystal surface emitting laser (PCSEL). We demonstrate lasing from devices with three different nanowire diameters from undeformed, stretched, and compressed honeycomb lattices. Under optical pumping we show that the PCSEL lases at the wavelength of 966 nm (stretched pattern), with the lasing threshold of 103 μJ/cm 2. The lasing wavelength increases as the nanowire diameter increases. Combining photoluminescence results and numerical simulations on the field profile and the quality factors of the devices, we establish that the lasing of the device is from the radial quantum well structure.<br>The data set includes:Fig.1 (e): PL intensity (a.u.) vs wavelength (nm)Fig. 1 (f): PL peak wavelength vs nanowire diameterFig. 3 (c): Frequency (ωa/2πc) vs Wavevector. Each structure is in a separate file (DATA_x.csv). Each file contains a 2d array. Each column contains the frequency data points for each mode (outx, where x is mode number). The first column contains the index of the wavevector, which is an uniform distribution of values in the M-Gamma-X direction. DATAZ.csv contains the same data, but cropped to show the zoomed in inset.Fig. 3 (d): Confinement factor vs mode numberFig. 4 (a): One file per spectrum containing a 2D array spectrometer CCD image written as wavelength (nm) vs intensity (a.u.). Wavelength and intensity values are given for each pixel in a raster-scan pattern across the 2D image, starting with the top row in the direction of increasing wavelength. Each row in the 2D image is a full spectrum, the full image contains 512 rows.<br>Spectrum data was taken with a 2D array CCD spectrometer. Spectrum datafiles indicate measurement conditions in the file name such as laser used, power and exposure time. Bandstructure data was simulated using the Python package Legume.<br>

本研究展示了以径向InGaAs量子阱作为有源区材料的核壳纳米线的室温激射行为。该纳米线具有GaAs/InGaAs/InGaP量子阱结构，排列于变形蜂窝晶格中，构成光子晶体面发射激光器（photonic crystal surface emitting laser，PCSEL）。
本研究针对未变形、拉伸及压缩型蜂窝晶格的三种不同纳米线直径的器件，均实现了激射行为。在光泵浦条件下，拉伸晶格结构的PCSEL激射波长为966 nm，激射阈值为103 μJ/cm²。研究发现，激射波长随纳米线直径增大而增加。结合光致发光（photoluminescence，PL）测试结果与器件场分布、品质因数的数值模拟，我们证实该器件的激射行为源于径向量子阱结构。
本数据集包含以下内容：
1. 图1(e)：光致发光强度（任意单位，arbitrary unit，a.u.）随波长（nm）的变化关系
2. 图1(f)：PL峰波长随纳米线直径的变化关系
3. 图3(c)：频率(ωa/2πc)随波矢的变化关系。每种结构的数据单独存储于DATA_x.csv文件中，每个文件包含二维数组；每一列对应单个模式的频率数据点（格式为outx，其中x为模式序号）。第一列为波矢索引，其数值沿M-Γ-X方向均匀分布。DATAZ.csv包含相同数据，但经裁剪以展示放大的内嵌图。
4. 图3(d)：限制因子随模式序号的变化关系
5. 图4(a)：每条光谱对应一个数据文件，存储以二维数组形式呈现的光谱仪CCD图像，横轴为波长(nm)、纵轴为强度(a.u.)。数据按光栅扫描顺序给出二维图像中每个像素的波长与强度值，从顶部行开始沿波长递增方向排布。二维图像的每一行对应一条完整光谱，整幅图像共包含512行。
光谱数据采用二维阵列CCD光谱仪采集，数据文件名中包含测试条件信息，如所用激光器、泵浦功率及曝光时长。能带结构数据通过Python开源库Legume模拟得到。