Two-phase immersion cooler for medium-voltage silicon carbide MOSFETs

Medium-voltage (MV) silicon carbide (SiC) MOSFETs play a pivotal role in various industrial applications, including electrical vehicles, DC fast charging stations, and renewable energy conversion systems, among others. Compared to their silicon counterparts, the MV SiC MOSFETs feature higher efficiency, faster switching speeds, lower heat generation, and higher power density. Despite their advantages, SiC MOSFETs also lead to higher cooling demands. To address this challenge, we have developed a two-phase immersion cooler, in which the base plate is immersed in the liquid pool, and vapor generated from coolant boiling on the base plate is condensed on the top surface of the immersion cooler under external air cooling. To further improve the cooling capacity, the base plates are textured with microchannels. Experimental tests have been performed to characterize the thermal performance of the two-phase immersion cooler with a state-of-the-art 6.5kV SiC device. The immersion cooler with mi..., , # Data from: Two-phase immersion cooler for medium-voltage silicon carbide MOSFETs

Dataset DOI: [10.5061/dryad.k98sf7mk9](10.5061/dryad.k98sf7mk9)

## Description of the data and file structure

This dataset includes the temperature histories captured during two-phase immersion cooling of a medium-voltage silicon carbide MOSFET. The immersion cooler is pre-filled with 10 mL of deionized water (~ 54% of the volume of the chamber). During the thermal tests, the MOSFET is charged with a power supply (TDK-Lambda GEN300W), and the PWM fan is connected to a power supply (BK Precision 1671A) and an Arduino UNO R3 board for duty cycle control. A T-type bolt-on thermocouple (McMaster-Carr 3648K26) is mounted on a bolt connected to the base plate (*T*bolt). Three T-type probe thermocouples (OMEGA Engineering TJ36-CPSS-032U-6) are used to measure the ambient temperature (*T*amb) and the temperatures of the source of the MOSFET (*T*source) and PCB (*T*PCB), respectively. All thermocouples are conn...,

中压（Medium-voltage, MV）碳化硅（silicon carbide, SiC）金属氧化物半导体场效应晶体管（MOSFET）在电动汽车、直流快充站以及可再生能源转换系统等诸多工业应用中发挥着关键作用。相较于传统硅基器件，中压SiC MOSFET具备更高的能效、更快的开关速度、更低的热耗散以及更高的功率密度。尽管拥有上述优势，SiC MOSFET却对散热系统提出了更高的要求。为应对这一挑战，本研究开发了一款两相浸没式冷却装置：基板浸没于冷却液池中，基板上因冷却液沸腾产生的蒸汽可在浸没式冷却器的顶面通过外部风冷实现冷凝。为进一步提升散热性能，基板表面加工了微通道纹理结构。研究团队针对一款先进的6.5kV SiC器件开展了实验测试，以表征该两相浸没式冷却装置的热性能。该浸没式冷却装置搭配微... , , # 数据来源：面向中压碳化硅MOSFET的两相浸没式冷却器
数据集DOI：[10.5061/dryad.k98sf7mk9](10.5061/dryad.k98sf7mk9)

## 数据与文件结构说明
本数据集包含中压碳化硅MOSFET两相浸没冷却过程中采集的温度时序数据。该浸没式冷却装置预先注入10mL去离子水（约占腔体容积的54%）。热性能测试过程中，MOSFET由TDK-Lambda GEN300W型电源供电，PWM风扇通过BK Precision 1671A型电源与Arduino UNO R3开发板连接，以实现占空比控制。实验中采用一枚T型螺栓式热电偶（McMaster-Carr 3648K26）安装于与基板相连的螺栓上（记为*T*bolt）；另外三支T型探针式热电偶（OMEGA Engineering TJ36-CPSS-032U-6）分别用于测量环境温度（*T*amb）、MOSFET源极温度（*T*source）以及印刷电路板（Printed Circuit Board, PCB）温度（*T*PCB）。所有热电偶均已连...