The role of H3K4me3 of low temperature memory in Arabidopsis. The role of H3K4me3 of low temperature memory in Arabidopsis
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https://www.ncbi.nlm.nih.gov/bioproject/PRJNA899831
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Plants experience a wide array of environmental stimuli to form a memory of adversity. Histone modification plays roles in plant stress memory, of which the mechanisms of H3K4me3 of low temperature memory in plants are poorly understood although H3K4me3 is a key histone modification. Combined with phenotypic analysis, chip-seq, and transcriptome analyses were performed to investigate the potential H3K4me3 contributions for different phases of recurring cold stresses Arabidopsis plants. We then performed gene expression profiling analysis using data obtained from RNA-seq of different low temperature treatments. Overall design: Comparative gene expression profiling analysis of RNA-seq data for different low temperature treatments, cold memory (S1:4°C for 6 h, then at room temperature for 18 h; S4:4°C for 6 h, then at room temperature for 18 h, repeated four times), and then placed at 0°C for 6 h, and control groups with normal growth conditions.
植物会受到多种环境刺激的作用,进而形成逆境记忆。组蛋白修饰(Histone modification)在植物逆境记忆过程中发挥关键功能,尽管H3K4me3是一类重要的组蛋白修饰类型,但目前学界对植物低温记忆相关的H3K4me3调控机制仍缺乏深入认知。为探究H3K4me3在拟南芥反复低温胁迫不同阶段的潜在调控作用,本研究结合表型分析、染色质免疫共沉淀测序(ChIP-seq)与转录组分析开展相关实验。随后,我们基于不同低温处理的RNA测序(RNA-seq)数据进行基因表达谱分析。整体实验设计如下:对不同低温处理的RNA-seq数据开展对比基因表达谱分析,处理组包括低温记忆组相关处理:S1组为4℃处理6小时,随后置于室温培养18小时;S4组为4℃处理6小时、室温放置18小时,该循环重复4次后,置于0℃处理6小时,同时设置正常生长条件的对照组。
创建时间:
2022-11-09



