覆盖新场景的工业芯片可靠性预测模型及检测平台技术研究数据集

工业芯片可靠性检测平台功能验证数据，是为了验证平台的功能具备模拟复现环境电磁干扰的能力，依托具备资质的计量机构，在标准实验室采用标准试验方法和标准设备，进行辐射电场等各项功能指标的验证测试，获得测试数据，数据以表格形式，数据量在1M左右。芯片可靠性预测模型数据是为了验证可靠性模型的预测精准度，来源于模型在软件中的仿真以及实验室测试，实验室测试是针对GGNMOS、MOSFET等不同器件利用半导体器件分析仪、半导体探针台、TLP测试设备等设备，施加不同的电磁热加速条件获得数据；模型仿真数据是将开发的模型通过器件电学特性仿真软件，施加与实验室加速测试同样条件，仿真获得。Functional verification data for industrial chip reliability detection platforms: This dataset is collected to verify that the platform has the capability to simulate and reproduce environmental electromagnetic interference. The verification tests covering various functional indicators such as radiated electric fields were conducted in a standard laboratory using standard test methods and equipment, supported by a qualified metrology institution, and the corresponding test data was obtained. The data is stored in tabular format, with a total size of approximately 1 MB. Chip reliability prediction model data: This dataset is used to validate the prediction accuracy of reliability models, sourced from both software-based simulations of the models and laboratory tests. For laboratory tests, data is acquired by applying different electromagnetic-thermal acceleration conditions to various devices including GGNMOS and MOSFET, using instruments such as semiconductor device analyzers, semiconductor probe stations, and TLP testing equipment. The model simulation data is generated by running the developed models through device electrical characteristic simulation software under the same electromagnetic-thermal acceleration conditions as those used in the laboratory accelerated tests.

搜集汇总

背景与挑战

背景概述

该数据集由工业芯片可靠性检测平台功能验证数据和芯片可靠性预测模型数据两部分组成。前者基于标准实验室测试获得辐射电场等指标，验证平台模拟环境电磁干扰的能力；后者通过实验室测试和仿真，针对GGNMOS、MOSFET等器件施加电磁热加速条件，用于评估预测模型的准确性。数据以表格形式存储，总容量43.54MB，包含7个文件。