XRD and Crystallographic Data of Electrochemically Etched Gallium Phosphide (GaP) for Porous Surface Formation

This dataset presents X-ray diffraction (XRD) data and crystallographic reference parameters for a gallium phosphide (GaP) sample that underwent electrochemical etching to form a porous, textured surface. The modification aimed to enhance the surface area and optimize lattice compatibility for the subsequent formation of heterostructures. The etching was carried out in an aqueous–alcoholic solution to achieve controlled porosity and maintain crystalline integrity. The dataset includes: Experimental XRD intensity data (2θ vs. counts); Reference stick pattern for cubic GaP (PDF reference code 00-032-0397; space group F-43m, a = 5.4506 Å, density = 4.13 g cm⁻³, Z = 4); Peak positions and intensities corresponding to key reflections (111), (200), (220), (311), (222), (400), (331), and others. This dataset supports studies on surface modification, porous semiconductors, and GaP-based heterostructure synthesis for optoelectronic and photovoltaic devices. Funding:Prepared within the project “Design and research of oxide heterostructures for portable solar cells” (Project No. 0124U000223), funded by the National Research Foundation of Ukraine under the Cambridge–NRFU 2022 Individual Grants programme (supported by the University of Cambridge, UK).本数据集包含经电化学刻蚀制备得到多孔织构表面的磷化镓（gallium phosphide, GaP）样品的X射线衍射（X-ray diffraction, XRD）数据与晶体学参考参数。该表面改性工艺旨在提升比表面积，并优化晶格相容性，以支持后续异质结构的构筑。刻蚀过程在水醇混合溶液中进行，以实现可控的孔隙率并维持晶体结构完整性。 本数据集涵盖以下内容： 1. 实验X射线衍射强度数据（2θ与衍射计数的对应关系）； 2. 立方相磷化镓的标准衍射峰棒状图（PDF参考编号：00-032-0397；空间群：F-43m，晶胞参数a=5.4506 Å，密度4.13 g·cm⁻³，晶胞内化学式单元数Z=4）； 3. 对应于(111)、(200)、(220)、(311)、(222)、(400)、(331)等主要衍射峰的峰位与强度信息。 本数据集可用于支撑表面改性、多孔半导体以及面向光电子与光伏器件的GaP基异质结构合成相关研究。 资助说明：本数据集依托项目"面向便携式太阳能电池的氧化物异质结构设计与研究"（项目编号：0124U000223）完成，该项目由乌克兰国家研究基金会（National Research Foundation of Ukraine, NRFU）根据剑桥-NRFU 2022年度个人资助计划（由英国剑桥大学支持）资助。