Impact of rapid thermal processing on bulk and surface recombination mechanisms in FZ silicon with fired passivating contacts

NIAID Data Ecosystem2026-03-13 收录

半导体材料加工

光伏钝化接触技术

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https://zenodo.org/record/5566362 数据链接链接失效反馈

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Data underlying the article

创建时间：

2022-02-18

一种金刚石膜生长方法、具有金刚石膜的硅片与应用

半导体材料加工

金刚石膜沉积

本申请公开了一种金刚石膜生长方法、具有金刚石膜的硅片与应用，所述生长方法包括将硅片浸泡在金刚石粉分散液中，得到预处理后的硅片，其中，所述硅片的一面设有由沟槽形成的图形；对所述预处理后的硅片进行热丝化学气相沉积，得到具有金刚石膜的硅片，所述金刚石膜覆盖所述沟槽的底部和侧壁。该方法克服了在较窄较深沟槽内金刚石难形核、难生长问题，避免了沟槽底部及侧壁无法完好成膜导致的绝缘效应无法保证的问题；该方法尤其适

中国科学院中国科学技术大学科学数据中心120

Ga interaction with ZnO surfaces: diffusion and melt-back etching_experimental dataset

材料表面相互作用

半导体材料加工

This archive contains the raw unfileterd data to the Pejchal et al., Ga interaction with ZnO surfaces: diffusion and melt-back etching, Applied Surface Science, Volume 583, 1 May 2022, 152475.

Zenodo2022-02-15 更新20

Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing

单晶硅切割工艺

半导体材料加工

Abstract The aim of this study was to investigate the influence of the cutting parameters on monocrystalline silicon cut by diamond wire sawing. The sawn surface was analyzed in terms of surface morph

NIAID Data Ecosystem10

Typical Thermal Atomic Layer Etching (ALE) Processes for Representative Materials

原子层刻蚀工艺

半导体材料加工

This comparison summarizes the key thermal atomic layer etching (ALE) processes reported for representative materials as presented in “Thermal atomic layer etching: Mechanism, materials and prospects”

DataCite Commons2025-11-05 更新20

Thermal Isotropic ALE Mechanisms of SiO₂

原子层刻蚀工艺

半导体材料加工

Details thermally driven isotropic ALE processes involving sequential reactions without plasma assistance. Each entry lists the multistep etching mechanism (conversion → fluorination → ligand exchange

DataCite Commons2025-11-09 更新10

Impact of rapid thermal processing on bulk and surface recombination mechanisms in FZ silicon with fired passivating contacts

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