We will map individual mesas in thes materials using DFXM

DataCite Commons2026-03-13 更新00

Dataset for the project of high TD density QWs grown on Si, published here. The different sub-datasets are named after: the measurement technique, from [ Atomic Force Microscopy (AFM) ; Cathodolumine

Zenodo2023-11-06 更新00

In-situ strain relaxation of InGaN/GaN mesa measured by μLaue

For the development of efficient μdisplays, CEA-Leti is developing a new “InGaN” substrate. This new substrate is made of a 200 nm InGaN layer which is patterned into 5 μm mesas. The patterning allows

DataCite Commons2025-02-24 更新50

Strain Mapping in InGaN/GaN