Multi-modal characterization of silicon carbide MOSFET trench defects

Silicon carbide (SiC) is a promising wide-bandgap (WBG) semiconductor, enabling power electronics to be smaller, faster, more efficient and more reliable than their counterparts based on silicon (Si) technology. However, today’s devices suffer from a multitude of defects that limit the yield of production lines and require advanced characterization methods. Here, we propose an in-situ study on the structure of the gate in a latest-generation SiC trench-MOSFET, a common point of failure that remains inadequately understood. For this purpose, two MOSFET samples are being prepared, (I) a MOSFET to be first characterized via 2D holography with subsequent scanning XRD and XBIC measurements of ROIs, and (II) a small section of the trench structure isolated by FIB for 3D holography and ROI scans of XEOL. This multi-scale characterization of the trench goes far beyond standard methods and provides a unique opportunity to identify weaknesses in the industrial fabrication.