电吸收调制激光器(EML)腔面反射率测量数据

用椭偏测量端面镀膜的反射率，基本原理是基于光在介质表面反射前后偏振态的变化，获得材料的光学常数与结构信息。入射光束的电场在两个垂直方向分解，平行于光波振动的为p光，垂直于光波振动方向的为s光。光束经过介质表面反射后p光和s光的振幅和相位都会改变。利用紫外光、可吸收光、红外光和激光等测定物质的吸收光谱，利用此吸收光谱在特定波长处或一定波长范围内光的吸收度对物质进行定性定量分析，得到被测物质的反射率或透过率。EML芯片发射光功率数据文件格式为.jpg，数据大小2.78MB.其中横轴是波长，波长范围为100nm，分辨率是1nm。纵轴是反射率，单位是%。在对应波长点下的反射率就是所需要反射率的具体制。要求达到万分之一以下。

Ellipsometry is utilized to measure the reflectance of end-face coated films. Its fundamental principle lies in acquiring the optical constants and structural information of materials by analyzing the variations in the polarization state of light before and after reflection at the dielectric surface. The electric field of the incident light beam is decomposed into two perpendicular components: p-polarized light (parallel to the vibration direction of the light wave) and s-polarized light (perpendicular to the vibration direction of the light wave). After being reflected at the dielectric surface, the amplitude and phase of both p-polarized and s-polarized light beams will change.

Absorption spectra of test substances are measured using ultraviolet light, visible light, infrared light, lasers and other light sources. Qualitative and quantitative analysis of the substances is then performed based on the light absorbance at specific wavelengths or within a certain wavelength range of the absorption spectra, to obtain the reflectance or transmittance of the measured samples.

The data file for the EML chip's emitted optical power is saved in .jpg format, with a file size of 2.78 MB. The horizontal axis of the dataset represents wavelength, covering a range of 100 nm with a resolution of 1 nm; the vertical axis represents reflectance, with the unit of %. The reflectance value at the corresponding wavelength point is the target reflectance data, which is required to be lower than one ten-thousandth (0.01%).

搜集汇总

背景与挑战

背景概述

该数据集提供了电吸收调制激光器(EML)腔面反射率的测量数据，通过椭偏测量方法分析光在介质表面反射后的偏振态变化，以获取材料的光学常数。数据以.jpg格式存储，横轴为波长（范围100nm，分辨率1nm），纵轴为反射率（单位%），要求测量精度达到万分之一以下。