双层二维类金属半导体Sn2Bi的制备数据集

利用分子束外延技术在半导体Si(111)衬底上制备出了一种二维类金属半导体Sn2Bi，并利用扫描隧道显微镜对其电子态结构进行了表征，并实现了单个Bi 空位缺陷上实现了多达五重电荷态的操控。 该数据集包括了利用扫描隧道显微镜对双层二维类金属半导体Sn2Bi的形貌及电子态进行表征的原始数据和分析文件。A 2D metallic-like semiconductor Sn₂Bi was fabricated on a semiconducting Si(111) substrate via molecular beam epitaxy (MBE). Its electronic structure was characterized using scanning tunneling microscopy (STM), and manipulation of up to five-fold charge states on a single Bi vacancy defect was achieved. This dataset contains raw data and analysis files obtained from the characterization of the topography and electronic structure of bilayer 2D metallic-like semiconductor Sn₂Bi using scanning tunneling microscopy (STM).

搜集汇总

背景与挑战

背景概述

该数据集聚焦于利用分子束外延技术在Si(111)衬底上制备双层二维类金属半导体Sn2Bi，并通过扫描隧道显微镜表征其形貌和电子态结构，实现了单个Bi空位缺陷的多重电荷态操控。数据集包含相关的原始数据和分析文件，用于支持该材料的研究。