Data for: "Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3"

Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide phase vapor epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures and strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor-acceptor-pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n =1,2,3