Ultra-High-Pressure Annealing Data for Mg-ion-implanted GaN with carbon capping

Name: Ultra-High-Pressure Annealing Data for Mg-ion-implanted GaN with carbon capping
Creator: Institute of High Pressure Physics
Published: 2026-05-13T13:34:03+08:00

RepOD Repository for Open Data2026-05-13 更新2026-07-23 收录

GaN离子注入退火

p型掺杂工艺

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/RO6VRA 数据链接链接失效反馈

官方服务：

资源简介：

Boćkowski, Michał, 2026, "Ultra-High-Pressure Annealing Data for Mg-ion-implanted GaN with carbon capping", https://doi.org/10.18150/RO6VRA, RepOD, V1

提供机构：

Institute of High Pressure Physics

创建时间：

2026-05-13

Ultra-High-Pressure Annealing Data for Mg-ion-implanted GaN with carbon capping

资源简介：

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