Deterministic grayscale nanotopography to engineer mobilities in strained MoS...
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Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics....
基于原子级超薄沟道二维材料（two-dimensional materials，2DMs）的场效应晶体管（Field-effect transistors，FETs）已成为后硅基电子学领域极具潜力的技术平台……
