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Visualization of stacking faults in InSb micropillars by ptychographic topogr...

B2FIND2026-03-19 收录

半导体缺陷表征

应变成像

数据链接：

https://b2find.eudat.eu/dataset/abaa67a7-99b6-546b-9743-ea88cc10c229 数据链接链接失效反馈

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资源简介：

X-ray Ptychographic topography, a new tool for strain imaging

X射线叠层形貌成像术（X-ray Ptychographic topography），一种用于应变成像的新型工具

应用场景：

半导体缺陷表征

金刚石光学性能

This proposal aims to investigate the relationship between crystal defects and X-ray Excited Optical Luminescence (XEOL) in diamond using the microLaue instrument available at BM32. By correlating the

ESRF Portal2028-01-01 更新50

MOESM1 of Strain imaging to assess early effects of successful percutaneous balloon mitral valvotomy on left atrium mechanics

心脏疾病

应变成像

Additional file 1: Raw data from patients with mitral stenosis before and balloon mitral valvotomy and in controls.

DataCite Commons2020-08-26 更新30

Point defects in InGaN/GaN QWs CL dataset

半导体缺陷表征

阴极荧光成像

Dataset of hyperspectral cathodoluminescence (CL) maps accompanying the following publication: T. F. K. Weatherley, W. Liu, V. Osokin, D. T. L. Alexander, R. A. Taylor, J.-F. Carlin, R. Butté, and N.

Zenodo2023-03-06 更新10

Data publication: Resonant defect states of transparent conductive oxide SnO2:Ta revealed by excitation wavelength-dependent Raman spectroscopy and hybrid functional DFT calculations

半导体缺陷表征

透明导电氧化物材料

The data publication contains the primary data used for the publication. There are three groups of data: Raman data, optical data, and DFT data. The two former are in txt format, the DFT partially as

DataCite Commons2024-12-06 更新50

Multi-modal characterization of silicon carbide MOSFET trench defects

半导体缺陷表征

功率半导体可靠性

Silicon carbide (SiC) is a promising wide-bandgap (WBG) semiconductor, enabling power electronics to be smaller, faster, more efficient and more reliable than their counterparts based on silicon (Si)

DataCite Commons2025-10-14 更新20

Visualization of stacking faults in InSb micropillars by ptychographic topogr...

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