Luminescence spectra, X-ray diffraction curves and nextnano++ simulations of InGaN/GaN laser diode structures with varying quantum barrier thickness and quantum well composition

Name: Luminescence spectra, X-ray diffraction curves and nextnano++ simulations of InGaN/GaN laser diode structures with varying quantum barrier thickness and quantum well composition
Creator: Institute of High Pressure Physics
Published: 2026-07-31T12:50:30+08:00

RepOD Repository for Open Data2026-07-31 更新2026-08-05 收录

GaN激光二极管

量子阱结构表征

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/2D2KV0 数据链接链接失效反馈

官方服务：

资源简介：

Bojarska-Cieślińska, Agata, 2026, "Luminescence spectra, X-ray diffraction curves and nextnano++ simulations of InGaN/GaN laser diode structures with varying quantum barrier thickness and quantum well composition", https://doi.org/10.18150/2D2KV0, RepOD, V1

提供机构：

Institute of High Pressure Physics

创建时间：

2026-07-31