基于新型MOCVD外延生长工艺开发数据集

新型MOCVD外延生长工艺主要针对新型MOCVD设备的硬件特点，探究GaN基材料的外延生长规律以及探索该款MOCVD设备腔室温场分布与气体流场分布对材料外延生长均匀性、稳定性的影响；开发了一套高组分均匀性、高厚度均匀性的单层外延材料及高波长均匀性的Micro-LED外延工艺，为项目的生产验证提供了较好的研究基础。该数据集主要采集了Micro-LED外延各单层工艺运行记录、工艺测试记录，以及通过温场与流场调节Micro-LED波长均匀性的工艺运行记录和工艺测试记录等数据，数据量约为15.3MB。Novel MOCVD epitaxial growth process is primarily tailored to the hardware characteristics of a new-generation MOCVD system, aiming to investigate the epitaxial growth regularity of GaN-based materials and explore the impacts of the chamber temperature field distribution and gas flow field distribution of this MOCVD system on the uniformity and stability of material epitaxial growth. A set of single-layer epitaxial materials with high compositional uniformity and thickness uniformity, as well as a Micro-LED epitaxial process with high wavelength uniformity have been developed, which provides a robust research foundation for the production verification of this project. This dataset mainly collects data including the process operation records and test records of each single-layer step in Micro-LED epitaxy, as well as the process operation and test records for adjusting the wavelength uniformity of Micro-LEDs by tuning the chamber temperature field and gas flow field. The total data volume is approximately 15.3 MB.

搜集汇总

背景与挑战

背景概述

该数据集聚焦于新型MOCVD设备的外延生长工艺开发，旨在探究GaN基材料生长规律及腔室温场、流场分布对材料均匀性和稳定性的影响，开发了高均匀性的单层外延材料和Micro-LED外延工艺。数据集包含工艺运行记录、测试记录等，数据量约15.3MB，为Micro-LED生产验证提供关键研究基础，属于国家重点研发计划项目的一部分。