On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate

Name: On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate
Creator: Institute of High Pressure Physics
Published: 2024-09-06T09:24:05+08:00

RepOD Repository for Open Data2024-09-06 更新2026-07-23 收录

AlGaN薄膜外延生长

HVPE工艺参数优化

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/WFFI5C 数据链接链接失效反馈

官方服务：

资源简介：

Jaroszyńska, Arianna, 2024, "On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate", https://doi.org/10.18150/WFFI5C, RepOD, V1

提供机构：

Institute of High Pressure Physics

创建时间：

2024-09-06