The influence of hydrogen admixture in the carrier gas on aluminum gallium nitride growth in halide vapor phase epitaxy

Name: The influence of hydrogen admixture in the carrier gas on aluminum gallium nitride growth in halide vapor phase epitaxy
Creator: Institute of High Pressure Physics
Published: 2026-03-18T11:51:02+08:00

RepOD Repository for Open Data2026-03-18 更新2026-07-23 收录

卤化物气相外延

氮化铝镓生长

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/SC1SCV 数据链接链接失效反馈

官方服务：

资源简介：

Sochacki, Tomasz, 2026, "The influence of hydrogen admixture in the carrier gas on aluminum gallium nitride growth in halide vapor phase epitaxy", https://doi.org/10.18150/SC1SCV, RepOD, V1

提供机构：

Institute of High Pressure Physics

创建时间：

2026-03-18