SEB Step Current Characteristic of GaN HEMTs
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资源简介：
Single-event burnout (SEB) experiments conducted on enhancement-mode GaN HEMTs, together with current measurements using a Keysight 34461A digital multimeter, revealed a new “step current” SEB characteristic, which provides a basis for studying the characteristic behavior of SEB phenomena.
创建时间：
2025-11-20
