Probing coexisting phases and their transition in fully strained epitaxial ferroelectric Hf0.5Zr0.5O2 thin films

Ultra-thin films of ferroelectric doped HfO2 have unexpected ferroelectricity and unusual polarisation mechanisms; combined with their high compatibility with silicon, they have attracted a lot of attention from both fundamental research and application point of view. However, the mechanisms behind these properties remain elusive. Several unanswered questions pertain to the crystal structures of the ferroelectric phase, their transition, and the stabilisation factors. We propose to leverage the capabilities of the diffuse x-ray diffractometer at ID28 to perform in situ, high-temperature studies to unravel the complexities of these phases and their transitions, aiming to shed light on the unique ferroelectric properties of HfO2.