Data underlying the publication: A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
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资源简介：
Measurements of a 36x36 gate electrode crossbar, fabricated on an industrial 28Si-MOS stack, that supports 648 narrow-channel field effect transistors for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines.
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4TU.ResearchData创建时间：
2022-03-01
