首页/数据集/MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity

MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity

Name: MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity
Creator: Materials Data Facility
Published: 2023-04-18T21:41:42+08:00

DataCite Commons2024-02-26 更新2025-04-15 收录

半导体外延生长

氮化镓基材料表征

数据链接：

https://www.materialsdatafacility.org/detail/ingan_on_crystallized_sam_v1.1 数据链接链接失效反馈

官方服务：

资源简介：

All the AFM, XRD and PL raw data files related to the published work

应用场景：

提供机构：

Materials Data Facility

创建时间：

2023-04-18

材料科学

计算物理

Optical absorption calculations in the GW+BSE framework for single-layer GaSe and GaTe in the hexagonal phase.

DataCite Commons2024-02-26 更新180

Tensile Properties of a Hot Melt Adhesive using Material Extrusion Additive Manufacturing

热熔胶

增材制造

ASTM D638-14 type-V tensile bars of Technomelt PA 6910 were printed with an Ultimaker 3 fused filament fabrication (FFF) printer. FFF is a thermally-driven form of material extrusion additive manufact

DataCite Commons2024-02-26 更新140

Probing the growth and melting pathways of a decagonal quasicrystal in real-time

准晶体

材料科学

This data was collected to study the principles of the growth and melting of a decagonal quasicrystal from a liquid. The composition of imaged sample is Al-9.55at%Ni-9.55at%Co, and the growth and melt

DataCite Commons2024-02-26 更新90

Gladier - Linking Scientific Instruments and Computation - Example Data

科学计算

仪器分析

This dataset includes test data to reproduce and build upon the results in the paper "Linking Scientific Instruments and Computation: Patterns, Technologies, Experiences" to appear. The dataset includ

DataCite Commons2024-02-26 更新140

高微分增益超晶格有源区和低串联电阻DBR的外延设计和生长数据集

VCSEL芯片设计

半导体外延生长

本项目面向低成本中长距离高速光通信对1300nmVCSEL的迫切需求，项目围绕“高速低功耗1300nmVCSEL带宽限制机理与提升机制”关键科学问题，和“高速低功耗1300nmVCSEL制备和测试表征”关键技术问题，研制出高速低功耗1300nmVCSEL芯片，实现高速低功耗1300nmVCSEL中长距离光纤传输示范。本数据集主要记录了高微分增益超晶格有源区和低串联电阻DBR的外延设计和生长研究开展

国家基础学科公共科学数据中心130

MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity

资源简介：

相关数据集