Correlative X-ray Beam Induced Current and Scanning X-ray Diffraction Microscopy on Semiconductor Heterostructures

We employ X-ray Beam Induced Current and Scanning X-ray Diffraction Microscopy with a nanofocussed beam to correlate structural and electrical properties on SiGe/Si and GaN/Si heterostructures. We test out the new modular XBIC setup consisting of a dedicated sample holder, a keithley 6487 picoammeter and a Voltage-to-frequency-converter and different types of electrical contacting. Moreover, we attempt to establish the sensitivity limit for mapping of doping concentrations and observe the effect of dopants on the lattice parameters.