Chromium Cluster Luminescence: Advancing Near‐Infrared Light‐Emitting Diode Design for Next‐Generation Broadband Compact Light Sources

In modern technology devices, an energy-saving miniature near-infrared (NIR) light source plays a critical role in non-destructive, non-invasive sensing applications and further advancement of technology. This dataset reports the broadband NIR luminescence of Cr3+ clusters for designing phosphor-converted NIR light-emitting diodes as an alternative to typical isolated Cr3+ centers and Cr3+ ion pairs. Here, Cr3+ clusters form in the intermediate spinel structure of MgGa2O4 by utilizing the long-chain edge-shared octahedral dimers with the shortest bond distance between Cr3+ cations. The formation of Cr3+ clusters in MgGa2O4 ensures stable internal quantum efficiency (≈94%), full-width-half-maximum (248 nm), thermal stability (87%), and a radiant flux of ≈17.66 mW. In that dataset, raw data of excitation (PLE) and emission (PL) spectra, temperature-dependent (TD), and high-pressure (PD) dependent photoluminescence and decay profiles are provided.