基于55nm与28nm工艺的HCI老化可靠性模型实验数据

本数据集面向先进工艺芯片可靠性研究需求建设，依托国家重点研发计划 “芯片可靠性和良率导向设计方法研究”（项目编号 2022YFB4400400）课题一，在西安电子科技大学国家工程中心采集生成。数据围绕 55nm、28nm 及 22nm 工艺节点 HCI 老化可靠性建模，55nm和28nm耦合模型建模，通过文献采集、实验测试与仿真分析获取，涵盖不同应力条件（电压、温度、时间）下的退化数据、模型参数及验证结果。数据集含 7 个子文件夹，包含原始数据、拟合文件、可视化图像、可执行程序等多种类型文件，为先进工艺器件可靠性模型开发与验证提供关键数据支撑。This dataset was developed to meet the research requirements of advanced process chip reliability studies. It was collected and generated at the National Engineering Research Center of Xidian University, supported by Task 1 of the National Key R&D Program of China "Research on Chip Reliability and Yield-Oriented Design Methods" (Project No. 2022YFB4400400). The data focuses on HCI aging reliability modeling for 55nm, 28nm and 22nm process nodes, as well as coupling model modeling for 55nm and 28nm nodes. It was acquired via literature collection, experimental testing and simulation analysis, covering degradation data, model parameters and verification results under different stress conditions including voltage, temperature and time. The dataset contains 7 subfolders with various types of files such as raw data, fitting files, visualization images and executable programs, providing critical data support for the development and validation of advanced process device reliability models.

搜集汇总

背景与挑战

背景概述

该数据集面向先进工艺芯片可靠性研究需求，依托国家重点研发计划项目，聚焦55nm和28nm工艺节点的HCI老化可靠性建模。它通过实验测试与仿真分析，提供了不同应力条件下的退化数据、模型参数及验证结果，包含多种文件类型，为器件可靠性模型开发与验证提供关键数据支撑。