超薄介质层TDDB统计失效模型实验数据

本数据集面向先进工艺芯片可靠性研究需求建设，基于 IEEE IRPS、IEDM 等权威期刊会议及出版书籍的实验数据，聚焦 55nm 与 28nm 工艺节点超薄介质层 TDDB 效应。包含击穿寿命原始数据、拟合模型文件、误差计算文件、特征寿命测试数据、文献来源及相关论文专利成果，数据量 3439MB，为 TDDB 模型的验证、优化及电路级可靠性仿真提供完整数据支撑。This dataset is developed to meet the research requirements of advanced process chip reliability. It is based on experimental data from authoritative journals, conferences including IEEE IRPS and IEDM, as well as published academic monographs, focusing on the time-dependent dielectric breakdown (TDDB) effect of ultra-thin dielectric layers at 55nm and 28nm process nodes. The dataset contains raw breakdown lifetime data, fitted model files, error calculation files, characteristic lifetime test data, literature citations, and related academic papers and patent achievements, with a total size of 3439 MB. It provides complete data support for the validation, optimization, and circuit-level reliability simulation of TDDB models.

搜集汇总

背景与挑战

背景概述

该数据集面向先进工艺芯片可靠性研究，聚焦55nm和28nm工艺节点的超薄介质层TDDB效应，包含击穿寿命原始数据、拟合模型及误差计算等文件。数据总量为3.46GB，旨在为TDDB模型的验证、优化及电路级可靠性仿真提供完整数据支撑。