An original method of compliant epitaxy, Nano-Pendeo Epitaxy, has been developed for achieving low dislocation density GaN and managing the strain in the nitride layers. Initial thin AlN and GaN layer
Atomic-scale simulations of reactive processes have been stymied by two factors: the general lack of a suitable semi-empirical force field on the one hand, and the impractically large computational bu
Atomic-scale simulations of reactive processes have been stymied by two factors: the lack of a suitable semi-empirical force field on the one hand, and the impractically large computational burden of
A set of research data related to article "On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals"; Crystals 2022, 12, 554. The results of basic ammonothermal crystallization of g
An original method has been developed for achieving low dislocation density gallium nitride (GaN) and managing the strain in the nitride layers. It is based on the...
