Temperature-Programmed Oxidation: SiC-CDC
收藏B2FIND2026-04-28 收录
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Mass loss curves from temperature-programmed oxidation of SiC-CDCs produced at temperatures between 1000 and 1600 °C
由对在1000 ℃至1600 ℃条件下制备的SiC-CDCs（silicon carbide-derived carbons，碳化硅衍生碳）进行程序升温氧化（temperature-programmed oxidation, TPO）实验得到的热失重曲线
