Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies

Name: Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies
Creator: Institute of High Pressure Physics
Published: 2023-09-17T07:08:26+08:00

RepOD Repository for Open Data2023-09-17 更新2026-07-23 收录

MOVPE生长模拟

InGaN合金热力学计算

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/8VH2B5 数据链接链接失效反馈

官方服务：

资源简介：

Strąk, Paweł, 2023, "Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies", https://doi.org/10.18150/8VH2B5, RepOD, V2

提供机构：

Institute of High Pressure Physics

创建时间：

2023-09-17