Piezoelectric and thermal strain in AlGaN/GaN-based HEMTs in operation

We propose to acquire operando scanning X-ray diffraction microscopy (SXDM) maps on Al(Ga)N/GaN-based HEMT devices in operation mode. The study aims to probe the lattice...本研究拟对处于工作状态的铝镓氮/氮化镓基高电子迁移率晶体管（High Electron Mobility Transistor，HEMT）器件，采集原位扫描X射线衍射显微术（operando scanning X-ray diffraction microscopy，SXDM）图谱。本研究旨在探究晶格……