6500V SiC MOSFET器件仿真与实验数据集
收藏资源简介：
2016YFB0400500-《高压大功率SiC 材料、器件及其在电力电子变压器中的应用示范》科学数据集中的2016YFB0400503-001-6500V SiC MOSFET器件仿真与实验数据集包含： 2016YFB0400503-功率模块双脉冲实验的电压和电流数据，数据文件中可以查询6.5kV SiC MOSFET模块的漏极电压波形、漏极电流波形和栅极电压波形。 2016YFB0400503-驱动电阻对开关特性的影响，数据文件中可以查询6.5kV SiC MOSFET模块在不同驱动电阻下的开关特性。 2016YFB0400503-功率模块寄生参数分布，数据文件中可以查询6.5kV SiC MOSFET模块的漏极、源极、辅助源极以及栅极回路的寄生参数分布。
The 2016YFB0400500 scientific dataset entitled *High-voltage and High-power SiC Materials, Devices and Their Application Demonstration in Power Electronic Transformers* encompasses the 2016YFB0400503-001-6500V SiC MOSFET Device Simulation and Experimental Dataset, which comprises three components as follows: 1. 2016YFB0400503 - Voltage and current data from power module double-pulse tests: The dataset files provide the drain voltage waveform, drain current waveform and gate voltage waveform of the 6.5kV SiC MOSFET power module. 2. 2016YFB0400503 - Impact of drive resistance on switching characteristics: The dataset files contain the switching performance data of the 6.5kV SiC MOSFET power module under various drive resistance conditions. 3. 2016YFB0400503 - Parasitic parameter distribution of power modules: The dataset files offer the parasitic parameter distributions of the drain, source, auxiliary source and gate loops of the 6.5kV SiC MOSFET power module.
