The effects of size and strain on the electronic behavior of AlN/GaN heteroju...
收藏B2FIND2026-03-19 收录
官方服务：
资源简介：
The electronic behavior of AlN/GaN heterojunction is investigated at thicknesses of 1.2~4.2 nm and biaxial strain of -8%~8% based on density functional theory. The structural...
本研究基于密度泛函理论（density functional theory），针对厚度范围为1.2~4.2 nm、双轴应变为-8%~8%的AlN/GaN异质结，对其电子行为展开了研究。该结构...
