官方服务：
资源简介：
Data of our paper, Expansion Coding for Performance and Lifetime Improvement on MLC STT-RAM.
应用场景：
提供机构：
NJIT创建时间：
2019-10-24
相关数据集
Ultrafast high-endurance memory based on sliding ferroelectrics
The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area-efficient and energy-efficient electronics, especially in emerging no
DataONE2024-06-21 更新70
Logic NVM Technology Market
The Logic NVM Technology market report offers a thorough competitive analysis, mapping key players’ strategies, market share, and business models. It provides insights into competitor dynamics, helpin
IMR REPORTS40
Resistive switching in benzylammonium-based Ruddlesden–Popper layered hybrid perovskites for non-volatile memory and neuromorphic computing
Structural, optoelectronic, and supplementary characterisation data for “Resistive Switching in Benzylammonium-Based Ruddlesden-Popper Layered Hybrid Perovskites for Non-Volatile Memory and Neuromorph
Zenodo2023-12-18 更新40
Dataset supporting the Paper titled: "Selective Policies for Efficient State Retention in Transiently-Powered Embedded Systems: Exploiting Properties of NVM Technologies"
Experimental data obtained from two experimental boards: MSP430FR5739 and LPC-Xpresso 810. Data used in paper titled "Selective Policies for Efficient State Retention in Transiently-Powered Embedded S
DataCite Commons2020-09-20 更新60
Self-Boosting Effect-based Electrochemical RAM with a-IGZO TFT for Highly Energy-Efficient Neural Network Computation
We present a self-boosting effect-based electrochemical random-access memory (SB-ECRAM), composed of an amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT) and an electrochemical ran
IEEE40
