Coalescence of GaN nanopillars grown by Nano-Pendeo Epitaxy

B2FIND2026-04-25 收录

氮化镓外延生长

纳米结构演化

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https://b2find.eudat.eu/dataset/83af8fe2-07be-5569-bee1-0d0fd2855dd4 数据链接链接失效反馈

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资源简介：

An original method of compliant epitaxy, known as Nano-Pendeo Epitaxy, has been developed for achieving low dislocation density GaN and managing the strain into the nitride...

Dataset for 'Design and fabrication of enhanced lateral growth for dislocation reduction and strain management in GaN using nanodashes'

氮化镓外延生长

位错分析

This dataset contains the results of scanning electron microscopy (SEM) secondary electron (SE) images, panchromatic cathodoluminescence (CL) imaging and Electron Channelling Contrast Imaging (ECCI) a

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DFXM study of the coalescence of GaN nanopillars grown by Nano-Pendeo Epitaxy

氮化镓外延生长

纳米柱聚结

An original method of compliant epitaxy, Nano-Pendeo Epitaxy, has been developed for achieving low dislocation density GaN and managing the strain in the nitride layers. Initial...

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Coalescence of GaN nanopillars grown by Nano-Pendeo Epitaxy

氮化镓外延生长

半导体缺陷控制

An original method of compliant epitaxy, known as Nano-Pendeo Epitaxy, has been developed for achieving low dislocation density GaN and managing the strain into the nitride layers. Initial thin AlN an

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Coalescence of GaN nanopillars grown by Nano-Pendeo Epitaxy

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